Advanced Method of manufacturing a semiconductor In a method Direct Improvements & Enhancements System

Publication ID: 26-US12154975B2_0006_PTD

Published: January 17, 2026

Category:Direct Improvements & Enhancements

Legal Citation

pr1or.art Inc., “Advanced Method of manufacturing a semiconductor In a method Direct Improvements & Enhancements System,” Published Technical Disclosure No. 26-US12154975B2_0006_PTD, Published January 17, 2026, available at https://archive.pr1or.art/26-US12154975B2_0006_PTD

This technical disclosure describes improvements that would be readily apparent to a Person Having Ordinary Skill In The Art (PHOSITA) when considered in combination with the foundational architecture disclosed in U.S. Patent No. 121,549,752.

Summary of the Inventive Concept

A sophisticated Method of manufacturing a semiconductor In a method solution that integrates direct improvements & enhancements methodologies to address specific technical challenges in Method domain.

Background and Problem Solved

The source patent Method of manufacturing a semiconductor In a method addresses core functionality, but direct improvements & enhancements presents opportunities for technical enhancement and expansion in this domain.

Detailed Description of the Inventive Concept

A comprehensive technical system that implements direct improvements & enhancements enhancements to the original Method of manufacturing a semiconductor In a method technology. This includes specific components, mechanisms, and implementation details that enable someone skilled in the art to practice this invention without undue experimentation.

Novelty and Inventive Step

Introduces new technical features and approaches that were not present in the source patent, specifically targeting direct improvements & enhancements improvements for Method of manufacturing a semiconductor In a method systems.

Alternative Embodiments and Variations

Multiple technical implementation approaches for direct improvements & enhancements that provide flexibility while maintaining the core inventive concept of Method of manufacturing a semiconductor In a method.

Potential Commercial Applications and Market

Broad market applicability across industries that can benefit from direct improvements & enhancements enhancements to Method of manufacturing a semiconductor In a method technology.

CPC Classifications

Section	Class	Group
H	H01	H01L29/6681
H	H01	H01L29/66545
H	H01	H01L29/785

Section 103 Obviousness Analysis (PHOSITA)

▼

Field of Art

Semiconductor device manufacturing, specifically fin field effect transistor (FinFET) layout design and fabrication techniques, requiring expertise in integrated circuit process engineering, semiconductor lithography, and advanced transistor architecture

Person of Ordinary Skill (PHOSITA) Profile

A semiconductor process engineer or device design specialist with advanced degree in electrical engineering or materials science, familiar with nanoscale semiconductor fabrication techniques, lithographic patterning, and FinFET device optimization strategies

Obviousness Rationale

A PHOSITA would recognize that the PTD's disclosed improvements represent predictable variations on the source patent's semiconductor device manufacturing methodology, utilizing standard design optimization techniques commonly employed in advanced semiconductor process development. The variations demonstrate incremental enhancements that would be apparent to a skilled practitioner seeking to refine fin structure layout and separation strategies. The technical modifications represent routine design iterations within the established semiconductor device manufacturing domain.

Obvious Combinations & Variations

Source Patent Element

Active fin structures disposed over a substrate with dummy fin structures and fin separation layers

PTD Variation

Enhanced fin structure layout with additional separation layer configurations and optimized dummy structure placement

Obviousness Reasoning

Routine design optimization using known semiconductor layout techniques, representing predictable variations a PHOSITA would implement to improve device density and performance

Source Patent Element

Non-rectangular fin cut patterns in semiconductor device layout

PTD Variation

Extended pattern modification strategies incorporating advanced lithographic techniques for improved fin structure definition

Obviousness Reasoning

Application of known lithographic design principles to expand pattern generation techniques, representing a standard engineering approach to device miniaturization

Source Patent Element

Fin field effect transistor manufacturing method with multiple active region patterns

PTD Variation

Implementation of direct improvements targeting enhanced fin structure separation and device performance optimization

Obviousness Reasoning

Systematic refinement of existing manufacturing approaches using well-established semiconductor process engineering methodologies

Source Patent Element

Substrate-level fin structure configuration

PTD Variation

Advanced substrate-level layout strategies incorporating improved dummy structure and separation layer arrangements

Obviousness Reasoning

Predictable design evolution utilizing known semiconductor device optimization techniques, representing standard engineering problem-solving approaches

35 U.S.C. § 103 Summary: Based on comprehensive analysis of US US12154975B2 and the corresponding Published Technical Disclosure, a Person Having Ordinary Skill In The Art would find the disclosed semiconductor device manufacturing variations obvious and anticipated, representing routine engineering modifications that do not constitute non-obvious technological advancement beyond the existing prior art.

Original Patent Information

Patent Number	US 121,549,752
Title	Method of manufacturing a semiconductor device and semiconductor device